general features v ds =60v,i d =50a r ds(on) <20m ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits uninterruptible power supply schematic diagram marking and pin assignment to-251 top view package marking and ordering information device marking device device package reel size tape width quantity MSN0650Z to-251 - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 50 a drain current-continuous(t c =100 ) i d (100 ) 35 a pulsed drain current i dm 220 a maximum power dissipation p d 80 w derating factor 0.53 w/ single pulse avalanche energy (note 5) e as 115 mj operating junction and st orage temperature range t j ,t stg -55 to 175 MSN0650Z MSN0650Z 60v(d-s) n-channel enhancement mode power mos fet lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 1.88 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 70 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1.5 2.0 2.5 v drain-source on-state resistance r ds(on) v gs =10v, i d =20a - 17 20 m ? forward transconductance g fs v ds =25v,i d =20a 24 - - s dynamic characteristics (note4) input capacitance c lss - 900 - pf output capacitance c oss - 104 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 33 - pf switching characteristics (note 4) turn-on delay time t d(on) - 25 - ns turn-on rise time t r - 5 - ns turn-off delay time t d(off) - 50 - ns turn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? - 6 - ns total gate charge q g - 30 nc gate-source charge q gs - 10 nc gate-drain charge q gd v ds =30v,i d =50a, v gs =10v - 5 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =40a - 1.2 v diode forward current (note 2) i s - - 50 a reverse recovery time t rr - 50 - ns reverse recovery charge qrr tj = 25c, if = 40a di/dt = 100a/ s (note3) - 100 - nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition:tj=25 ,v dd =30v,v g =10v,l=0.5mh,rg=25 ? more semiconductor company limited http://www.moresemi.com 2/6 MSN0650Z
test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit more semiconductor company limited http://www.moresemi.com 3/6 MSN0650Z
typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSN0650Z
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 5/6 MSN0650Z
to-251 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.200 5.400 0.205 0.213 e 5.400 5.700 0.213 0.224 e 2.300 typ 0.091 typ e1 4.500 4.700 0.177 0.185 l 7.500 7.900 0.295 0.311 more semiconductor company limited http://www.moresemi.com 6/6 MSN0650Z
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